Shielded gate trench mosfet devices

ABSTRACT

A shielded gate trench MOSFET device structure is provided. The device structure includes MOS gate trenches and p body contact trenches formed in an n type epitaxial silicon layer overlying an n+ silicon substrate. Each MOS gate trench includes a gate trench stack having a lower n+ shield poly silicon layer separated from an upper n+ gate poly silicon layer by an inter poly dielectric layer. The upper and lower poly silicon layers are also laterally isolated at the areas where the lower poly silicon layer extends to silicon surface by selectively removing portion of the upper poly silicon and filling the gap with a dielectric material. The method is used to form both MOS gate trenches and p body contact trenches in self-aligned or non self-aligned shielded gate trench MOSFET device manufacturing.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationwith Ser. No. 16/596,754 filed on Oct. 8, 2019, which is a continuationin part of U.S. patent application with Ser. No. 16/414,769 filed on May16, 2019, now U.S. Pat. No. 10,777,661, which is a continuation in partof U.S. patent application with Ser. No. 16/290,834 filed on Mar. 1,2019, now U.S. Pat. No. 10,998,438, which relates to and claims priorityfrom U.S. provisional patent application Ser. No. 62/637,274 filed onMar. 1, 2018, which are expressly incorporated by reference herein intheir entirety.

BACKGROUND Field of the Invention

The present invention relates to semiconductor devices, moreparticularly, to device structures and methods of forming trench metaloxide semiconductor field effect transistor (MOSFET) devices.

Description of the Related Art

In power metal oxide semiconductor field effect transistor (MOSFET)devices, as the resistance per square area is kept decreasing due to theavailability of new structures, advanced process techniques and tools,die sizes for MOSFET products are also getting smaller and smaller.There are several challenges to be addressed in advanced trench MOSFETproducts with smaller die sizes, for example: (1) increasing thermalresistance of the smaller die, (2) increasing robustness of the MOSFETsto handle much higher current density under unclamped inductive, highdv/dt and diode recovery mode of operations compared to low performinglarger die area type power MOSFETs, and (3) minimizing Rds and Cgdvariations due to large variation of Inter Poly Oxide (IPO) thickness.

Manufacturing thinner dies and improved power device packaging canaddress the thermal resistance related issues in power MOSFET devices.Improving the robustness of power MOSFET devices in smaller diesincludes, for example, (1) providing structures and processes tolocalize breakdown in the middle of the MOSFET body, (2) ensuring deviceavalanche breakdown to occur in the active device cells (MOSFETs) ratherthan the termination areas, (3) keeping extremely low p body to sourceshorting resistance to prevent turn on of parasitic NPN bipolartransistor of the MOSFET. Mask misalignment of a non-self-aligned p bodycontact to trench causes an increased shorting resistance between the pbody and the n+ source of the MOSFET. Therefore, there is a need for newprocesses to form p+ body contact structures to minimize the adverseeffect of the non-self-aligned p body contacts

SUMMARY

An aspect of the present invention includes a method for formingshielded gate trench MOSFET devices, including: providing a siliconlayer having n type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, a plurality of gatetrenches in an active region of the front surface, the gate trenchesextending orthogonally from the front surface toward the semiconductorsubstrate; forming in each gate trench a gate trench stack including:forming a shield layer lining side walls and bottom wall of each gatetrench, wherein the shield layer is silicon oxide; forming a first dopedpoly silicon layer on a portion of the shield layer lining the bottomwall and lower portions of the side walls of the gate trench; removingupper portions of the shield layer to expose upper portions of the sidewalls; forming a first film of an inter poly oxide (IPO) layer on thefirst doped poly silicon layer, the first film of the IPO layer being apoly silicon oxide (PSO) film; forming a second film of the inter polyoxide (IPO) layer on the first film of the IPO layer, the second film ofthe IPO layer being a silicon oxide film; forming an undoped polysilicon (UPS) layer on the second film of the IPO layer; forming aprotection layer continuously and conformally coating the upper portionsof the side walls and the UPS layer, the protection layer being asilicon oxide layer; removing only a portion of the protection layercoating the UPS layer using reactive ion etching while retainingportions of the protection layer on the upper portions of the sidewalls; etching the UPS layer by a silicon etching process; etching theprotection layer left on the side walls by a silicon oxide etching;growing a gate oxide layer on the upper portions of the side walls; andforming a second doped poly silicon layer on the gate oxide layer andthe IPO layer; forming p body regions and n+ source regions extendingbetween the gate trenches; and forming a dielectric layer on the frontsurface.

Another aspect of the present invention includes a method for formingshielded gate trench MOSFET devices, including: providing a siliconlayer having an n type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, a plurality of gatetrenches in an active region of the front surface, the gate trenchesextending orthogonally from the front surface toward the semiconductorsubstrate; forming in each gate trench a gate trench stack including:forming a shield layer lining side walls and bottom wall of each gatetrench, wherein the shield layer is silicon oxide; forming a first dopedpoly silicon layer on a portion of the shield layer lining the bottomwall and lower portions of the side walls of the gate trench; removingupper portions of the shield layer to expose upper portions of the sidewalls; forming an inter poly oxide (IPO) layer including a poly siliconoxide film on the first doped poly silicon layer; depositing undopedpoly silicon on the IPO layer; etching down the undoped polysilicon toform an undoped poly silicon (UPS) layer on the IPO layer; removing anysilicon oxide from the side walls formed during the forming of the IPOlayer by a silicon oxide etching; forming a protection layercontinuously and conformally coating the upper portions of the sidewalls and the UPS layer, the protection layer being a silicon oxidelayer; removing only a portion of the protection layer coating the UPSlayer using reactive ion etching while retaining portions of theprotection layer on the upper portions of the side walls; removing theUPS layer; etching the protection layer left on the side walls by asilicon oxide etching; growing a gate oxide layer on the upper portionsof the side walls; and forming a second doped poly silicon layer on thegate oxide layer and the IPO layer; forming p body regions and n+ sourceregions extending between the gate trenches; and forming a dielectriclayer on the front surface.

Another aspect of the present invention includes a method for formingshielded gate trench MOSFET devices, including: providing a siliconlayer having n type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, a plurality of gatetrenches in an active region of the front surface, the gate trenchesextending orthogonally from the front surface toward the semiconductorsubstrate; forming in each gate trench a gate trench stack including:forming a shield layer lining side walls and bottom wall of each gatetrench, wherein the shield layer is silicon oxide; forming a first dopedpoly silicon layer on a portion of the shield layer lining the bottomwall and lower portions of the side walls of the gate trench; removingupper portions of the shield layer to expose upper portions of the sidewalls; forming a first film of an inter poly oxide (IPO) layer, which isa poly silicon oxide film, on top of the first doped poly silicon layer,by applying an oxidation process, the oxidation process also results informing a silicon oxide layer on the upper portions of the side walls;forming a second film of the inter poly oxide (IPO) layer on the firstfilm of the IPO layer, which is a silicon oxide film, by firstdepositing a silicon oxide film on both the first film and the siliconoxide layer, patterning the silicon oxide film with a photoresist layerso as to only expose the portions of the silicon oxide film on thesilicon oxide layer, and etching portions of the silicon oxide film andthe silicon oxide layer on the upper portions of the side walls,removing the photoresist layer to expose the IPO layer; growing a gateoxide layer on the upper portions of the side walls; and forming asecond doped poly silicon layer, on the gate oxide layer and the IPOlayer, filling the gate trench; forming p body regions and n+ sourceregions extending between the gate trenches; and forming a dielectriclayer on the front surface.

Another aspect of the present invention includes a method for formingshielded gate trench MOSFET devices, including: providing a siliconlayer having n type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, a plurality of gatetrenches in an active region of the front surface, the gate trenchesextending orthogonally from the front surface toward the semiconductorsubstrate; forming in each gate trench a gate trench stack including:forming a shield layer lining side walls and bottom wall of each gatetrench, wherein the shield layer is silicon oxide; forming a first dopedpoly silicon layer on a portion of the shield layer lining the bottomwall and lower portions of the side walls of the gate trench; removingupper portions of the shield layer to expose upper portions of the sidewalls; forming an inter poly oxide (IPO) layer, including a poly siliconoxide film, on top of the first doped poly silicon layer, whereinforming of the IPO layer results in forming silicon oxide on upperportions of the side walls; depositing photoresist on the IPO layer;etching down the photoresist to form a photoresist layer on the IPOlayer; removing any silicon oxide from the side walls formed during theforming of the IPO layer by a silicon oxide etching; removing thephotoresist layer to expose the IPO layer; growing a gate oxide layer onthe upper portions of the side walls; and forming a second doped polysilicon layer, on the gate oxide layer and the IPO layer, filling thegate trench; forming p body regions and n+ source regions extendingbetween the gate trenches; and forming a dielectric layer on the frontsurface.

Another aspect of the present invention includes a method for formingshielded gate trench MOSFET devices, including: providing a siliconlayer having n type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, an array of aplurality of gate trenches and p body contact trenches in an activeregion of the front surface, the gate trenches and the contact trenchesextending orthogonally from the front surface toward the semiconductorsubstrate; and forming in each gate trench a gate trench stackincluding: forming a shield layer lining side walls and bottom wall ofeach gate trench, wherein the shield layer is silicon oxide; forming afirst doped poly silicon layer on a portion of the shield layer liningthe bottom wall and lower portions of the side walls of the gate trench;removing upper portions of the shield layer to expose upper portions ofthe side walls; forming an inter poly oxide (IPO) layer, including apoly silicon oxide film, on top of the first doped poly silicon layer,wherein forming of the IPO layer results in forming silicon oxide onupper portions of the side walls; depositing photoresist on the IPOlayer; etching down the photoresist to form a photoresist layer on theIPO layer; removing any silicon oxide from the side walls formed duringthe forming of the IPO layer by a silicon oxide etching; removing thephotoresist layer to expose the IPO layer; growing a gate oxide layer onthe upper portions of the side walls; and forming a second doped polysilicon layer, on the gate oxide layer and the IPO layer, filling thegate trench; forming p body regions and n+ source regions extendingbetween the gate trenches; forming a dielectric layer on the frontsurface; forming body contact trenches via a contact mask; forming p+body regions by low energy ion implantation of B or BF₂ ions through thebody contact trenches; and forming a top metal layer for sourceelectrodes and gate electrodes.

Another aspect of the present invention provides a method for formingshielded gate trench MOS devices, including: providing a silicon layerhaving a first type conductivity overlying a semiconductor substrate;forming, on a front surface of the silicon layer, an array of aplurality of gate trenches in an active region of the front surface, thegate trenches and the contact trenches extending orthogonally from thefront surface toward the semiconductor substrate; and forming in eachgate trench a gate trench stack including: forming a shield layer liningside walls and bottom wall of each gate trench, wherein shield layer issilicon oxide; forming a first doped poly silicon layer on a portion ofthe shield layer lining the bottom wall and lower portions of the sidewalls of the gate trench; removing upper portions of the shield layer toexpose upper portions of the side walls; forming an inter poly oxide(IPO) layer including a poly silicon oxide film, on top of the firstdoped poly silicon layer by a thermal oxide growth process, whereinforming of the IPO layer results in forming silicon oxide layer on upperportions of the side walls; depositing a high density plasma (HDP) oxidelayer on the oxide layer and the IPO layer to further thicken IPO layer,wherein a thickness ratio of the HDP oxide layer on the side walls to onthe IPO layer is about 1/5; removing the HDP oxide and the silicon oxidefrom the trench side walls using wet etching while retaining the HDPoxide over the IPO layer and portions of the HDP oxide layer and thesilicon oxide layer on the front surface; forming a photoresist layer byfilling cavity above the IPO layer; etching back the photoresist layerimmediately below the front surface to expose the portions of the HDPoxide layer and the silicon oxide layer on the front surface; removingthe portions of the HDP oxide layer and the silicon oxide layer from thefront surface and subsequently removing the photoresist to expose theIPO layer; growing a gate oxide layer on the upper portions of the sidewalls; and forming a second doped poly silicon layer, on the gate oxidelayer and the IPO layer, filling the gate trench.

Yet another aspect of the present invention includes a method forforming shielded gate trench MOSFET devices, including: providing asilicon layer having n type conductivity overlying a semiconductorsubstrate; forming, on a front surface of the silicon layer, a pluralityof gate trenches in an active region of the front surface, the gatetrenches extending orthogonally from the front surface toward thesemiconductor substrate; and forming in each gate trench a gate trenchstack including: forming a shield layer lining side walls and bottomwall of each gate trench, wherein shield layer is silicon oxide; forminga first doped poly silicon layer on the shield oxide layer lining thebottom wall and the side walls of the gate trench; forming a cavity,having a side walls and a bottom wall, within the first doped polysilicon layer so that at least one edge portion of the first doped polysilicon layer extends to the front surface; forming an inter poly oxide(IPO) including silicon oxide on the bottom wall of the first doped polysilicon layer; forming a gate oxide layer on the side walls of the firstdoped poly silicon layer; forming a second doped poly silicon layer onthe IPO layer lining the bottom wall and the gate oxide layer lining theside walls of the first doped poly silicon layer; reducing the thicknessof the second poly silicon layer; patterning and etching the second polysilicon layer so as to form a gap between an edge of the second polysilicon layer and the first poly silicon layer; and filling the gap andcoating top of the second poly silicon layer with a dielectric material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of an embodiment of the presentinvention including a shielded gate trench (SGT) MOSFET devicestructure;

FIGS. 2A-2D are schematic illustrations of an exemplary embodiment offorming gate trenches prior to forming of gate trench stacks;

FIGS. 3A-3B are schematic illustrations of exemplary embodiments offorming of shield poly silicon layers of gate trench stacks;

FIGS. 4A-4N are schematic illustrations of an exemplary embodiment offorming the gate trench stacks including inter poly dielectric (IPO)layers and gate poly silicon layers;

FIGS. 5A-5D are schematic illustrations of another exemplary embodimentof forming the gate trench stacks including inter poly dielectric (IPO)layers and gate poly silicon layers;

FIG. 6A-6D are schematic illustrations of another exemplary embodimentof forming the gate trench stack including IPO and gate poly siliconlayers;

FIGS. 7A-7F are schematic illustrations of exemplary embodiment to formSGT MOSFET device structure shown in FIG. 1, following the formation ofgate trench stacks;

FIG. 8 is a schematic illustration of an exemplary embodiment of forminga deep and narrow contact trench;

FIGS. 9A-9D are schematic illustrations of exemplary embodiment oflateral inter poly oxide (LIPO) layer located at least partially betweenthe poly silicon layers of the gate trench stacks; and

FIGS. 10A-10B show a flowchart including process embodiments of thepresent invention.

DETAILED DESCRIPTION

In addition to robustness improvements of the power MOSFET devices,embodiments of the present invention concern with methods of formingdielectric layers between doped poly silicon layers for semiconductordevices such as shielded gate trench (SGT) MOSFET devices and othersemiconductor devices. Such layers may be referred to as inter polydielectric layers, inter poly silicon dielectric layers (IPD layers), orinter poly silicon oxide (IPO) layers. IPD and IPO terms may be usedinterchangeably throughout this application to refer to inter polysilicon dielectrics.

In MOS gate trenches of the SGT MOSFET device structures, thicknessvariations in the IPO layer between the shield poly silicon layer (poly1), located approximately at the bottom half of the trench, and the gatepoly silicon layer (poly 2), located approximately at the upper half ofthe trench, may cause unwanted variations in the drain to sourceresistance (Rds) and the gate to drain capacitance (Cgd). Embodiments ofthe present invention may include methods and structures formanufacturing gate trench IPO layers having minimized thicknessvariations.

Conventionally, after the shield poly silicon deposition, the siliconoxide (SiO₂) layer, as shield oxide layer, on the side walls of the MOSgate trench above the shield poly silicon layer may be removed and anIPO layer may be formed on the shield poly silicon layer by partiallyoxidizing it during the gate oxide layer forming step, which also formsa gate oxide layer on the exposed portions of the trench side walls.Although silicon oxide may grow relatively thicker on the poly siliconthan the single crystal silicon side walls, the IPO layer grown over theshield poly silicon during the gate oxide forming stage may not be thickenough to meet Vgs-max rating reliably. That is why in such conventionaltechniques, for example for manufacturing split gate or shielded gatetype MOSFET structures, after the shield poly silicon deposition stepand the following etch down process step, additional silicon oxide maybe deposited to fill the gate trench. This additional silicon oxidefilling the gate trench is then planarized and etched down to form anIPO layer that is about 1.5 to 5 times thicker than the gate oxide. Inthis conventional process, thickness variations in the IPO may be verylarge, because the final IPO thickness may vary due to depth variationsof MOS gate trenches and etch back variations of the shield poly siliconas well as etch back variations of the deposited silicon oxide.

As opposed to the conventional techniques, embodiments of the presentinvention may provide a thicker IPO formation method on top of theshield poly silicon layer with minimal IPO thickness variation. Sincethe IPO growth or deposition starts at the surface of the shield polysilicon layer in the MOS gate trench, the process may be more repeatablewith less than about 5% variation and without being impacted from thetrench depth and shield poly silicon etch variations.

Accordingly, in one embodiment, the present invention provides a trenchMOSFET device including an array of a plurality of metal-oxidesemiconductor (MOS) gate trenches, or gate trenches, and p body contacttrenches, or contact trenches, formed on a semiconductor wafer. Thesemiconductor wafer may be a silicon wafer comprising an epitaxialsilicon top layer formed on a silicon substrate. The gate trenches andcontact trenches may be disposed in an alternating fashion in an activeregion on a top surface of the wafer and extending orthogonally into thewafer. The depth and the width of the contact trenches may be smallerthan the depth and the width of the gate trenches. The contact trenchesare disposed inside a p body region adjacent the gate trenches. Aheavily doped p+ body region located at the bottom of the contacttrenches may be in electrical contact with a source electrode of theMOSFET device via a portion of a contact material, or contact electrode,e.g., a metal filling, of the contact trench.

In one embodiment, each gate trench may include a gate trench stackformed by a process of the present invention. The gate trench stack mayinclude a first doped poly silicon layer separated from a second dopedpoly silicon layer by an inter poly dielectric layer, or inter polyoxide layer, that is formed in accordance with a process of the presentinvention.

FIG. 1 illustrates, in schematic cross-sectional view, an embodiment ofan active cell structure in a shielded gate trench MOSFET devicestructure 100 including a semiconductor layer 101 having a front surface101A or a top surface 101A, and a back surface 101B which may overlie asemiconductor substrate 102 (FIG. 2A). The top surface 101A may be thefront surface or the mesa surface of the semiconductor layer 101. Thesemiconductor layer 101 and the semiconductor substrate 102 may be justa small exemplary portion of a larger die (not shown) or wafer that mayinclude the exemplary active cell structure shown in FIG. 1.Semiconductor structures and active cell regions described in thisdisclosure may be formed on the same die using various processes usingthe same or different masking steps.

In one embodiment, the semiconductor layer 101 may be an epitaxial (epi)single crystal silicon layer grown over the semiconductor substrate. Thesemiconductor layer 101 may have a first type of conductivity, or n typeof conductivity, i.e., doped with n type of dopants, such as arsenic(As) ions or phosphor (P) ions. The semiconductor substrate may alsohave n type of conductivity; however, it is doped with an n type ofdopant concentration higher than the n dopant concentration of thesemiconductor layer 101, which is denoted with n++ to indicate its highn dopant concentration.

The semiconductor layer 101 may include an array of a plurality of MOSgate trenches 104 and p body contact trenches 106 formed in analternating fashion in an active area 108 of the MOSFET device 100, andextending orthogonally toward the back surface 101B from the top surface101A. In the following disclosure, MOS gate trenches will be referred toas gate trenches 104 and the p body contact trenches will be referred toas contact trenches 106. For clarity, figures in this disclosuregenerally show only two gate trenches 104, a first gate trench 104A anda second gate trench 104B, located at both sides of the contact trench106. A shielded gate trench MOSFET device may include a plurality ofgate trenches and contact trenches disposed in an alternating fashion,i.e., an order of “gate trench/contact trench/gate trench/contacttrench/. . . ”, in an active area of the device.

Referring back to FIG. 1, the gate trenches 104 and the contact trench106 are rectangular in cross-section formed in the semiconductor layer101 by patterning and etching the top surface 101A. The trenches 104 and106 may extend parallel to one another along the front surface 101A ofthe semiconductor layer 101. During the process of forming them, thegate trenches 104 and the contact trenches 106 may or may not beself-aligned in the semiconductor layer 101, i.e., the measured distanceseparating each gate and contact trench in the array may be the same ordifferent. In one embodiment of the present invention, the contacttrenches 106 may be formed after the completion of the gate trenchstacks 109 in the gate trenches 104.

The gate trenches 104 may be defined by side walls 105A and a bottomwall 105B, and the contact trenches 106 may be defined by side walls107A and a bottom wall 107B. The contact trench 106 may be symmetricallypositioned between the gate trenches 104, i.e., self-aligned manner. Thegate trenches 104 may have a first depth denoted with D1 and a firstwidth denoted with W1. The contact trenches 106 may have a second depthdenoted with D2 and a second width denoted with W2. In one embodiment,D1 may be greater than D2, and W1 may be greater than W2. In anotherembodiment, D1/2 may be greater than D2, and W1/2 may be greater thanW2. The first depth D1 may be in the range of about 1-10 microns and thesecond depth D2 may be in the range of about 0.3-1 micron. The firstwidth W1 may be in the range of about 0.4-2 microns and the second widthW2 may be in the range of about 0.15-0.3 microns.

Referring back to FIG. 1, a first contact region 112A or, a first p bodycontact region (p body), having a second type conductivity, or p typeconductivity, may be formed by implanting p type dopants, such as boron(B) ions, to the semiconductor layer 101 through the top surface 101A.The first contact region 112A may have a rectangular cross section andformed in a portion of the semiconductor layer 101 between the gatetrenches 104. The first contact region 112A may have a depth D3 measuredfrom the top surface 101A. The depth D3 of the first contact region 112Amay be less than the first depth D1 of the gate trench 104 and greaterthan the second depth D2 of the contact trench 106. An exemplary depthD3 for the first contact region 112A may be in the range of about0.3-1.0 micron.

As mentioned above, the gate trenches 104 may include gate trench stacks109 filling the trench cavities. Each gate trench stack 109 may includea first poly silicon layer 114A (shield poly silicon), separated from asecond poly silicon layer 114B (gate poly silicon) by an inter polydielectric layer 110. In one embodiment, the first poly silicon layer114A may fill a bottom half of the gate trench 104 and the second polysilicon layer 114B may fill the upper half of the gate trench 104. Inone embodiment, the inter poly dielectric layer 110 may be an inter polysilicon oxide layer 110 formed in accordance with a process of thepresent invention. The inter poly silicon oxide layer 110, or inter polyoxide layer 110, will be referred to as IPO layer 110, hereinafter. Inone embodiment, a shield oxide (SiO₂) layer 116A may be formed on abottom half of the side walls and the bottom wall of the gate trench104. The shield oxide layer 116A and the IPO layer 110 may electricallyinsulate the first poly silicon layer 114A. A gate oxide (SiO₂) layer116B may be formed on an upper half of the side walls of the gate trench104. The gate oxide layer 116B and the IPO layer 110 may electricallyinsulate the second poly silicon layer 114B.

In one embodiment, both the first poly silicon layer 114A and the secondpoly silicon layer 114B may be doped with n type dopants, thus includingn+ poly silicon material (n+ poly). This arrangement of poly siliconlayers in insulated gate trenches may be called double poly or shieldedgate trench structures including n+ poly 1 (first n+ poly silicon layer)and n+ poly 2 (second n+ poly silicon layer). Shielded gate trenchMOSFET structures may yield low drain to gate capacitance for fasterswitching of the MOSFET device.

Referring back to FIG. 1, a second contact region 112B, or the second pbody contact region (p+ body), may be formed under the contact trench106 by implanting dopants of the second type of conductivity through thebottom wall 107B of the contact trench 106. The second contact region112B may be doped with a p type dopant ion concentration higher than thep type dopant ion concentration of the first contact region 112A, whichis denoted with p+. The second contact region 112B may be in contactwith a contact conductor 118 filling the contact trench 106 and mayinclude an elliptically curved border expanding from the bottom wall107B and extending symmetrically in the direction of the gate trenchesand the back surface 101B from the bottom wall. The second contactregion 112B may be disposed about a symmetry center between twoneighboring gate trenches 104A and 104B.

Referring back to FIG. 1, the source contact regions 120 adjacent thefront surface 101A may extend between the contact trench 106 and thegate trenches 104 located at both sides of the contact trench 106. Thesource contact regions 120 (source regions) may be doped with high dosesof n type of dopant ions, and thus they will be referred to as n+ sourcecontact regions or n+ source regions.

In one process embodiment, the contact trenches 106 may be formed afterforming the first contact regions 112A and the source contact regions120 by etching the semiconductor layer 101 having the first contactregions 112A and the source contact regions 120 between the gatetrenches 104. In another process embodiment, the contact trenches 106may be formed together with the gate trenches and plugged with an oxide(SiO₂) plug throughout the process of forming the gate trench stacks104, the first contact regions 112A and the source contact regions 120.The oxide plug is removed after the formation of the first contactregions 112A and the source contact regions 120. In both processembodiments, the second contact regions 112B may be formed implantationthrough the contact trenches 106.

A contact conductor 118 filling the contact trench 106 may be a part ofa buffer layer 124 (the buffer metal). A source electrode 122 (sourcemetal), may be in contact with the source contact regions 120, the firstcontact region 112A and the second contact region 112B by the bufferlayer 124 extending through a dielectric layer 126 and into the contacttrenches 106. An exemplary dielectric layer 126 may be a composite layerhaving an undoped silicon oxide layer and a borophosphosilicate glass(BPSG) layer on top of the undoped silicon oxide layer. The undopedsilicon oxide layer may form a diffusion barrier between the BPSG layerand the top surface 101A of the semiconductor layer 101 as well as theadjacent oxide layers such as a surface layer 115. The surface layer115, or the surface oxide layer 115, may be located between the topsurface 101A and the dielectric layer 126. A passivation layer 128 maycoat the source electrode 122. The buffer layer 124 may be a layer ofTi/TiN/W which prevents aluminum spike into silicon and damaging shallowp body to drain junction. The contact conductor 118 may include W. Thesource 122 electrode may be one of a layer of Al:Cu:Si, a layer of Al:Sior a layer of Al:Cu.

Embodiments of exemplary processes to form the gate trench stacks andthe IPO layers 110 therein shown in the SGT MOSFET device structure 100of FIG. 1 will be described below with respect to FIGS. 2A-2D, 3A-3B,4A-4N, 5A-5D and 6A-6D.

FIGS. 2A-2D show processing with a first mask (M1 mask) to form the gatetrenches 104 prior to forming of the gate trench stack 109 (FIG. 1) inthe gate trenches.

FIG. 2A shows the semiconductor layer 101, which may be an n typeepitaxial layer (epitaxial silicon layer) formed on a substrate layer102, which may be a n++ type or n+ type silicon substrate, or wafer.Figures are not to scale and, after FIG. 2A, the substrate 102 will notbe shown for clarity purposes. The substrate layer 102 may have athickness of greater than 500 μm. In one embodiment, the thickness ofthe semiconductor layer 101, for example, for 20-400V MOSFET devices,may be in the range of about 2 to 40 μm. Before the etching process, ahard mask stack 90 including an oxide (SiO₂) layer, a nitride (Si₃N₄)layer, and another oxide (SiO₂) layer, which is known as ONO layer, maybe formed on the top surface 101A of the semiconductor layer 101. Eachoxide (SiO₂) layer in the hard mask stack 90 may have about 0.3-1 μmthickness and the nitride layer may have about 0.05-0.3 μm thickness.Alternatively, a single silicon oxide layer with 0.5-1.5 μm thickness,without a nitride layer, may also be used as hard mask.

FIG. 2B shows a process for forming the gate trenches 104 using a firstmask (M1 mask) which is the gate trench mask. A photoresist mask PR inFIG. 2B, may be used to define gate trench regions on the hard mask 90so that the semiconductor layer 101 may be etched down through thedefined hard mask 90 to form the gate trenches 104A and 104B, as shownin FIG. 2C. The etching process may form rectangular cavities of thegate trenches 104 which is defined by the side walls 105A and the bottomwall 105B. After the etching process, the gate trenches 104 may have adepth of about 0.3-0.7 μm and a width of about 0.3-1.2 μm. The distancebetween the gate trenches 104 may be in the range of about 0.3-1 μm.

As shown in FIG. 2D, after removing the hard mask stack 90, a gatetrench oxide layer 116A, or a trench oxide layer 116A, may be thermallygrown or deposited on the side walls 105A and the bottom wall 105B ofthe gate trenches 104. The trench oxide layer 116A may be a SiO₂ layerhaving a thickness in the range of about 50-500 nanometers (nm). Thetrench oxide layer 116A may conformally and continuously coat the sidewalls 105A and the bottom wall 105B of the gate trenches 104.

FIG. 3A shows processing with a second mask (M2 mask) to form the firstpoly silicon layer 114A in the gate trenches 104 after forming thetrench oxide layer 116A in the gate trenches and on the top surface 101Aof the semiconductor layer 101. Poly silicon material (n+ doped polysilicon) may be deposited over the top surface 101A of the semiconductorlayer 101 including the gate trenches 104 and etched back to form thefirst poly silicon layer 114A in the gate trenches 104 lined with thetrench oxide layer 116A. The poly silicon material may be just etchedback, or first planarized using CMP (chemical mechanical polishing) andthen etched back, to form the first poly silicon layer 114A having atargeted thickness within the gate trenches 104. An exemplary thicknessfor the first poly silicon layer 114A may be in the range of about 0.3-1μm. The first poly silicon layer 114A may be etched back to the targetthickness using Mask 2. In one embodiment, the target thickness of thefirst poly silicon layer 114A may preferably be within the bottom halfof the gate trenches 104. However, in other embodiments, the targetthickness may be within the upper half of the gate trenches.

Referring to FIG. 3B, alternatively, some gate trenches 104 may befilled with the first poly silicon material, on the processed wafer, maybe blocked by Mask 2 to form alternative structures.

FIGS. 4A-4N show a process embodiment of forming the gate trench stack109 including the inter poly oxide 110 (IPO layer) of the presentinvention. The IPO layer 110 may be comprised of a dielectric (SiO₂)bilayer, including a poly silicon oxide layer or film and a siliconoxide layer or film. The IPO layer 110 is interposed between the firstpoly silicon layer 114A and the second poly silicon layer 114B of thegate trench stack 109 (FIG. 1). In some process embodiments below, forclarity, the processing of the gate trench stack and the IPO layer 110will be described on a single gate trench 104.

Referring to FIG. 4A, after the deposition and etch back steps to formthe first poly silicon layer 114A, as shown in FIG. 3A, portions of thetrench oxide layer 116A on the trench side walls 105A, which aregenerally extending between the first poly silicon layer 114A and thetop surface 101A, may be removed by a silicon oxide etching process.This oxide etching process may expose silicon material of the upperportions of trench side walls 105A. Depending on the oxide etchingprocess, the remaining portion of the trench oxide layer 116A on theside walls 105A may or may not be coplanar with top surface of the firstpoly silicon layer 114A. In this embodiment, the trench oxide layers116A on the side walls 105A may be kept shorter and may not be coplanarwith the top surface of the first poly silicon layer 114A.

Referring to FIG. 4B, in the next process step, a poly silicon oxide caplayer 110A may be formed on top of the first poly silicon layer 114A byan oxidation process called pad oxidation. The poly silicon oxide caplayer 110A is the first layer or film of the IPO layer 110 (FIG. 1) andwill be referred to as poly silicon oxide (PSO) layer 110A hereinafter.The pad oxidation process transforms a top portion of the first polysilicon layer 114A into the PSO layer 110A the IPO layer 110. Togetherwith the PSO layer 110A, the same pad oxidation process may also form anoxide layer, which will be referred to as the first oxide layer 117A(first SiO₂ layer), on the exposed silicon portions of the side trenchwalls 105A and on the top surface 101A of the semiconductor substrate101. The PSO layer 110A and the first oxide layer 117A may have athickness in the range of about 20-30 nm. In one example, the PSO layer110A and the first oxide layer 117A may be about 20 nm thick.

Referring to FIG. 4C, in the next process step, a second oxide layer117B (second SiO₂ layer) may be formed on the PSO layer 110A and thefirst oxide layer 117A as well as any exposed portions of the trenchoxide layer 116A. The second oxide layer 117B may be deposited usingeither a thermal oxidation process or high density plasma (HDP) siliconoxide deposition process. If the second oxide layer 117B is grown by athermal oxidation process, it may be a conformal and continuous layerhaving a thickness in the range of about 30-100 nm. In this embodiment,the second oxide layer 117B may preferably be deposited using HDPdeposition process. The HDP deposited oxide may not have a uniformthickness, which may be thicker on the top surface 101A and over the PSOlayer 110A but thinner on the first oxide layer 117A on the side walls105A. A ratio of HDP oxide deposition over the side walls (verticaldeposition, i.e., toward the top surface 101A) and the PSO layer 110Amay be in the range of about 1:4 to 1:6.

As will be shown more fully below, a second layer 110B or film of theIPO layer 110 will be formed from a portion of the second oxide layer117B covering the PSO layer 110A, when the process of forming the IPOlayer 110 is completed. HDP silicon oxide deposition may be preferredfor resulting thinner oxide layers on the vertical surfaces, howeverother deposition processes may also be used to form the second oxidelayer 117B.

Referring to FIG. 4D, after forming the second oxide layer 117B, anundoped poly silicon (UPS) material may be deposited on the second oxidelayer 117B. The UPS material may coat the top surface 101A and fill thetrench cavity lined with the second oxide layer 117B. The undoped polysilicon material may have a smaller grain size than the doped polysilicon. Small grain size of the undoped poly silicon may provide asmooth and flat surface finish for the UPS layer 111.

Referring to FIGS. 4E-4F, in the following process step, the UPSmaterial may be planarized and reduced to a thickness range of about 100nm to form the UPS layer 111 over the PSO layer 110A. The UPS layer 111is a sacrificial layer to protect the portion of the second oxide layer117B, coating the PSO layer 110A, from the etchants used to etch SiO₂during the following process steps. After forming the UPS layer 111using a poly silicon etching process step, an oxide (SiO₂) etchingprocess may be conducted to remove both the first oxide layer 117A andthe second oxide layer 117B from the trench side walls 105A, therebyexposing the silicon material of the trench side walls 105A. The oxideetching process may remove portions of the first oxide layer 117A andthe second oxide layer 117B on the trench side walls 105A and extendingabove a top surface 111A of the UPS layer 111, as shown in FIG. 4F. Inthis configuration, upper ends of remaining portions of the first andsecond oxide layers 117A and 117B on the side walls 105A may be coplanarwith the planarized surface 111A of the UPS layer 111. At the end ofthis oxide etching process, remaining portions of the first and secondoxide layer 117A and 117B on the top surface 101A may have thickness inthe range of about 30-50 nm.

Referring to FIG. 4G, after forming the UPS layer 111 and the followingoxide etching process, a third oxide layer 117C may be formedconformally coating the UPS layer 111 and the exposed portions of thetrench side walls 105A and the remaining portions of the first andsecond oxide layers 117A, 117B on the top surface 101A. The third oxidelayer 117C may have a thickness in the range of about 20-30 nm and maybe formed to protect the trench side walls 105A from the siliconetchants used during the removal of the UPS layer 111. In order toexpose the UPS layer 111 for the subsequent polysilicon etching process,a Reactive Ion Etching (RIE) process may be used to remove the portionof the third oxide layer 117C covering the UPS layer 111 and theportions of the third oxide layer 117C and the second oxide layer 117Bon the top surface 101A. Referring to FIG. 4G, the RIE process isdepicted with arrows directed to the horizontal portions of the thirdoxide layer 117C. During the RIE process, the portions of the thirdoxide layer 117C on the trench side walls are not etched.

Referring to FIGS. 4H-4J, in the following process steps, the UPS layer111 may be removed using a poly silicon etch step, which exposes thesecond oxide layer 117B covering the PSO layer 110A. During the polysilicon etching process remainders of the third oxide layer 117C on theside walls and the first oxide layer 117A on the top surface 101A mayprotect the silicon surfaces underneath. After the removal of UPS layer111, the remainders of the third oxide layer 117C and the first oxidelayer 117A are removed from the trench side walls 105A and the topsurface 101A respectively. Since HDP deposited second oxide layer 117Bmay be formed thicker at the top surface 101A and on top of the PSOlayer 110A than the portions of the second oxide layer on the trenchside walls 105A, after the etching of the oxide layers 117A and 117C,remaining second oxide layer 117B on top of the PSO layer 110A willstill be thick enough.

Referring to FIG. 4K in the following process step, a fourth oxide layer117D may be formed on the exposed silicon portions of the trench sidewalls 105A and on the top surface 101A, which is subsequently removedusing a silicon oxide etch process The fourth oxide layer 117D may be asacrificial oxide layer. The sacrificial oxide layer 117D may have apredetermined thickness in the range of about 20-30 nm, which is used tosmooth trench side walls 105A for the subsequent gate oxide growthprocess. During the removal of the sacrificial oxide layer 117D, thesecond oxide layer 117B on the PSO layer 110A and the remainder of thefirst oxide layer 117A may be further etched and planarized, as shown inFIG. 4L. This sacrificial oxide etching step may reduce the thickness ofthe second oxide layer 117B by the same predetermined thickness of thesacrificial oxide layer 117D. Referring to FIG. 4L, this resultingportion of the second oxide layer 117B on the PSO layer 110A forms thesecond layer 110B of the IPO layer 110 of the present invention, whichcompletes the formation of IPO layer 110 of the gate trench stack 109(FIG. 1). The PSO layer 110A and the silicon oxide layer 110B form thefirst film 110A and the second film 110B of the IPO layer 110 of thepresent invention.

Referring to FIG. 4M, in the next process step, a gate oxide layer 116Bmay be formed on the exposed surfaces of the gate trench side walls 105Aand on the top surface 101A. The gate oxide layer 116B may have athickness in the range of 10-150 nm and smoothly continues, without anygaps, from the IPO layer 110 on and the remainder of the trench oxidelayer 116A surrounding the first poly silicon layer 114A. The trenchoxide layer 116A surrounding the first poly silicon layer 114A togetherwith the IPO layer 110 is the shield oxide layer 116A of the gate trenchstack 109. The gate oxide layer 116B may be grown thermally and mayinclude a few percent chlorine to prevent drifting of the thresholdvoltage in the MOSFET device.

Referring to FIG. 4N, once the gate oxide layer 116B is grown on upperportion of the side walls 105A, the second poly silicon layer 114B maybe formed in the cavity of the gate trench 104 defined by the IPO layer110 on the first poly silicon layer 114A and the gate oxide layers 116Bon the side walls 105A. During the process, poly silicon material may bedeposited on the top surface 101A to fill the gate trenches 104 andcover the top surface 101A of the semiconductor layer 101. In the nextstep, the poly silicon material may be either planarized using a CMPprocess or etched back to form the second poly silicon layer 114B in thegate trenches 104. The formation of the second poly silicon layer 114Bmay complete the structure of the gate trench stack 109 having the IPOlayer 110 of the present invention.

FIGS. 5A-5D show an alternative process embodiment of forming the gatetrench stack 109 including the inter poly silicon oxide dielectric layer110 (IPO layer) of the present invention. FIG. 5A of this embodimentshows a process step after the process step shown in FIG. 4C of theprevious embodiment. After forming the second oxide layer 117B with HDPprocess, differing from the undoped poly silicon material (UPS) of theprevious embodiment, a photoresist (PR) may be deposited on the secondoxide layer 117B lining the trench cavity. The photoresist may coat thetop surface 101A and fill the trench cavity coated by the second oxidelayer 117B.

Referring to FIGS. 5B-5C, in the following process step, the photoresistmaterial may be etched back and a portion of it over the PSO layer 110Amay be reduced to a thickness range of about 100 nm to form aphotoresist (PR) layer 113. The PR layer 113 is a sacrificial layer toprotect the portion of the second oxide layer 117B on top of the PSOlayer 110A from the etchants used to etch SiO₂ during the followingprocess steps. After forming the PR layer 113, an oxide etching processmay be conducted to remove the first oxide layer 117A and the secondoxide layer 117B from the trench side walls 105A and the top surface101A of the semiconductor layer 101. The oxide etching process removingthe portions of the oxide layers 117A and 117B on the trench side walls105A may expose the silicon surfaces, which extend above a top surface113A of the PR layer 113. In this configuration, upper ends of remainingportions of the oxide layers 117A and 117B may be coplanar with theplanarized surface 113A of the PR layer 113, as shown in FIG. 5C.

Referring to FIG. 5D, after forming the PR layer 113 and the followingoxide etching process, in the next step, the PR layer 113 may be removedusing a photoresist etch, which exposes the portion of the second oxidelayer 117B covering the PSO layer 110A. It should be noted that thestructure shown in FIG. 5D of this embodiment is also the structureshown in FIG. 4J of the previous embodiment. After FIG. 5D, the processof the present invention may continue following the same process stepsas described above in the first embodiment and shown in FIG. 4K throughFIG. 4N to form the IPO layer 110 and the rest of the gate trench stack109. In this embodiment, the process of forming of the gate trench stack109 including the IPO layer 110 of the present invention is finalized asshown in FIG. 4N.

FIGS. 6A-6D show another alternative process embodiment of forming thegate trench stack 109 including the inter poly silicon oxide dielectriclayer 110 (IPO layer) of the present invention. This embodiment mayinclude a photoresist etch-back approach. FIG. 6A of this embodimentshows a process step after the process step shown in FIG. 4C of thefirst embodiment.

As previously explained in the first embodiment, the second oxide layer117B deposited using the HDP oxide deposition process may be thicker,e.g., 5 to 6 times thicker, on the top surface 101A, or the mesasurface, and on the PSO layer 110A than the first oxide layer 117A onthe trench side walls 105A or the vertical surfaces. Using thisdifferential HDP oxide deposition process, in one embodiment, the secondoxide layer 117B may have a thickness of about 100 nm over the topsurface 101A while having about 20 nm thickness on the vertical surfacesof the first oxide layer 117A.

Referring to FIG. 6A, an oxide etch process may be used to remove theoxide layers 117A and 117B covering the upper portions of the side walls105A and to reduce the thickness of the portions of the second oxidelayer 117B over the top surface 101A and on top of the PSO layer 110A.The oxide etch process may be a wet etch using buffered hydrofluoricacid solution. After reducing its thickness, the portion of the secondoxide layer 117B on the PSO layer 110A becomes the second layer 110B ofthe IPO layer 110 of the present invention, which completes theformation of IPO layer 110 of the gate trench stack 109 (FIG. 1). ThePSO layer 110A and the second layer 110B may form the first film 110Aand the second film 110B of the IPO layer 110 respectively as alsodescribed above.

Referring to FIG. 6B, in the following step, in order to remove theremaining portions of the first and second oxide layers 117A, 117B fromthe top surface 101A without harming the IPO layer 110 or the trenchside walls, a photoresist layer 119 may be formed over the IPO layer110. Top surface of the photoresist layer 119 may be coplanar with thetop surface 101A or kept slightly below the top surface 101A to exposethe remaining portions of the first and second oxide layers 117A, 117Bon the top surface 101A.

Referring to FIG. 6C, after forming the photoresist layer 119, a siliconoxide etch may be applied to remove the remaining portions of the firstand second oxide layers 117A, 117B from the top surface 101A.

Referring to FIG. 6D, next, the photoresist layer 119 may be removedusing a photoresist etch step to expose the IPO layer 110. It should benoted that the structure shown in FIG. 6D of this embodiment is also thestructure shown in FIG. 4L of the first embodiment. After FIG. 6Dprocess of the present invention continues following the same processsteps as shown in FIGS. 4M-4N, and described above in the firstembodiment, to form the gate trench stack 109. In this embodiment, theprocess of forming of the gate trench stack 109 including the IPO layer110 of the present invention is finalized as shown in FIG. 4N.

FIGS. 7A-7F show the process steps following the formation of gatetrench stacks 109 to form SGT MOSFET device structure 100 shown in FIG.1 including the first contact region 112A (p body contact region), thesource regions 120 (n+ source contact regions), contact trenches 106,dielectric layer 126, the second contact region 112B (p+ body contactregion), the buffer metal layer 124, the source metal layer 122 (sourceelectrode) and the passivation layer 128.

Referring to FIG. 7A, the surface oxide layer 115, or surface layer 115.may be formed on the top surface 101A and on the second poly siliconlayer 114B (gate poly silicon) in the gate trenches 104 during p bodydrive stage. After forming the gate trench stacks 109 in the gatetrenches 104, the remainder of the gate oxide material on the topsurface 101A may be etched down to make the surface oxide layer 115having about 20-30 nm thickness, which may also act like a screen oxidelayer during the following source implantations.

Next, the first p body or first contact region, 112A having p type ofconductivity, may be formed by implanting p type dopants, such as boron,to the semiconductor layer 101 through the top surface 101A. A dose forthis B ion implantation may be in the range of 5e12-5e13 cm⁻² to formthe first contact region 112A. The first contact region 112A has agenerally rectangular cross section and formed in a portion of thesemiconductor layer 101 between the gate trenches 104. As explainedabove with respect to FIG. 1, an exemplary depth for the first contactregion 112A may be in the range of about 0.3-1.0 micron.

Referring to FIG. 7B, in the next process step, a fourth mask (mask 4)may be used to implant high doses of an n+ type source implant, such asP ions or As ions, to form the source regions 120 extending between thegate trenches 104. Source mask may be a photomask allowing sourceimplant to be implanted to form the source regions 120 while blockingany implantation to other locations on the top surface 101A. A dose forthe source implant may be in the range of 3E15-6E15 cm⁻² to form the n+source regions 120.

Referring to FIG. 7C, before forming the contact trenches, thedielectric layer 126 such as a composite layer including a BPSG layerand an undoped silicon oxide layer may be formed on the surface oxidelayer 115. As described above the undoped oxide layer may be a diffusionbarrier. The dielectric layer 126 including the undoped oxide layer andthe BPSG layer may have a thickness range in the range of 0.3-1 μm. Thedielectric layer 126 may also be referred to as inter layer dielectric(ILD).

Referring to FIG. 7D, in the next process step, a fifth mask (mask 5),or contact mask, may be used to form the contact trenches 106 in theactive cell region and the second contact regions 112B under the contacttrenches 106. The contact mask may be applied to etch the dielectriclayer 126 and the semiconductor substrate 101 to form the contacttrenches 106.

Referring to FIG. 7E, in the following process step, the second contactregion 112B may be formed by implanting high doses of B or BF₂ ions toform the second contact region 112B under the contact trench 106.Because of the high p type dopant dose used to form the second contactregions 112B, p+ body may be used to denote the second contact regions.The p type dopant ions may be implanted through the bottom wall 107B ofthe contact trench 106 to form the second contact region 112B.

In the following process steps, the buffer metal layer 124 includingTi/TiN/W having a thickness range of about 0.1-0.2 μm may be depositedon top of the dielectric layer 126 and contact trenches 106 and othercontact windows. Next, a source metal layer, Al:Cu, Al:Si or Al:Cu:Sihaving a thickness range of 2-8 μm may be deposited on top of the buffermetal layer 124 and etched to form source and the gate electrodes byusing the metal mask (mask 6). The contact trenches 106 may include acontact material 118 including W metal as shown in FIG. 7F.

In the following step, the passivation layer 128 may be formed on thesource and gate metal 122 and etched using an eighth mask (mask 8) orthe passivation mask (mask 7). The passivation layer 128 may include alayer of Plasma Enhanced Chemical Vapor Deposition (PECVD) depositedSiO₂/Si₃N₄ layer having a thickness of about 0.8-1 μm. By utilizing thepassivation mask (mask 7), the PECVD deposited SiO₂/Si₃N₄ layer may beremoved from the source and gate pad areas. For some cases, in additionto the passivation layer, a polyimide layer may also be deposited (byspinning on). The polyimide layer may have a thickness of about 3-10 μm.The buffer metal layer 124, the source metal 122 and the passivationlayer 128 may be seen in FIG. 1.

FIG. 8 illustrates, in schematic cross-sectional view, an embodiment offorming a contact trench 406, which may be narrower or smaller than thephotolithography capability of a wafer fab, by forming oxide spacers 430on the side walls of the wider contact windows 405 in a dielectric layer426B (BPSG layer and undoped silicon oxide layer). It is critical toform deep and narrow p body contact trenches 406 in the epi layer forthe robustness of the non self-aligned contact type MOSFET devices. Thecontact trench 406 may be used with the embodiments described in thisapplication.

The advantage of the present invention is that the large photoresistdefined contacts, for example a 0.25 μm wide contact window, may bereduced down to, for example 0.1 μm wide contact window, by depositingdielectric layer(s) and RIE etching and forming dielectric spacers, forexample about 0.075 μm wide spacers inside the large contact windows.Such contact windows are narrowed by two spacers' width compare tophotoresist defined contact window. This method may be used as a contactshrinkage technique to form deep and narrow p body contact trenches.

In one embodiment of the narrow and deep contact trench forming process,after forming the n+ source regions as described in the previousembodiments, a silicon oxide layer 415 may be formed on the top surface401A of the epitaxial silicon layer 401. A first and second dielectriclayers 426A, 426B respectively may be formed on the silicon oxide layer415. Contact windows 405 or contact openings may be formed in the seconddialectic layer 426B over an area between the gate trenches 404 to formthe contact trenches 406 in the following steps. By depositing siliconoxide within the contact windows 405 and RIE etching it, oxide spacers430, having slanted surfaces, with gradually increasing in width formedalong the side walls 405A of the contact windows 405 and on the firstdielectric layer 426A. In the following etch process step, deep andnarrow contact trenches 406 formed through the contact windows 405having the oxide spacers 430.

An exemplary process sequence to form such narrow contact trenchesaccording to present invention may include the steps of: (1) an oxidelayer 415 deposition after forming the n+ source regions (not shown);(2) planarizing with CMP or etching back the oxide layer 415 to fillover the second poly silicon layers 414B (the thickness of the oxidelayer 415 on the top surface 401A of the epitaxial layer 401 may be inthe range of 100 to 200 nm); (3) depositing on the oxide layer 415, afirst dielectric layer 426A, which may be SiON (silicon oxynitride) orSiN (the thickness of the first dielectric layer 426A may be in therange of 100 nm), (4) depositing and reflowing on the first dielectriclayer 426A, a second dielectric layer 426B or intermetal dielectriclayer, which may be a combination of BPSG and undoped silicon oxidelayers, or a TEOS layer, (5) planarizing the second dielectric layer426B, applying photoresist and using a photoresist contact mask (notshown) to form contact windows 405 in the second dielectric layer 426Bwith about 0.25 μm opening width Wo, (6) forming contact openings 405 inthe second dielectric layer 426B (about 90 degree etching of the seconddielectric layer 426B, stopping on the first dielectric layer 426A), (7)stripping photoresist mask, (8) forming a silicon oxide layer (notshown) on the second dielectric layer 426B to fill the contact windows405 (the silicon oxide layer having a thickness in the range of about 75nm.

(9) using Reactive Ion Etching (RIE) process, forming oxide spacers 430within the contact windows 405, adjacent the side walls 405A, of thesecond dielectric layer 426B (etching process may continue to the topsurface 401A of the epitaxial layer 401 beneath, and a 0.075 um wideoxide spacers (10) using a silicon etch (contact silicon etch), forminga contact trench 406 having a contact trench depth Dc of about 0.3-0.5μm and a contact trench width Wc of about 0.1 μm at the bottom, (thecontact trench width Wc at the bottom of the contact trench 406 may beadjusted with the oxide spacer width and the photoresist contact masksize), (10) forming Ti/TiN barrier metal and the W metal plug. Variousdepth, width and thickness values given above and shown in FIG. 8 forthis embodiment are example values.

Another embodiment of the semiconductor device manufacturing methodaccording to present invention will now be described below, withreference to FIGS. 9A-9D which illustrate only an exemplary half of aplurality of gate trenches for clarity. Each of these figures shows aprocess step involved in the manufacture of a reliable SGT MOSFETdevices with lateral inter poly oxide (LIPO) layer located at leastpartially between the poly silicon layers of the gate trench stacks. Inthis embodiment, the LIPO layer may be located between a first polysilicon layer 214A, which may be extended to the surface where the firstpoly silicon layer 214A is connected to the source electrode, and asecond poly silicon layer 214B. In this alternative gate trench stackstructure, both the first and the second poly silicon layers within thegate trenches may extend to the surface of the epi layer and laterallyseparated by the lateral inter poly oxide (LIPO) layer of the presentinvention to complete a fully functional and reliable SGT MOSFET device.Without the LIPO layer, the SGT MOSFET device may fail due to shortingbetween the first and second poly silicon layers. Further, without asubstantially thick LIPO layer, the SGT MOSFET device may fail hightemperature gate to bias (HTGB) reliability test.

FIG. 9A shows an initial structure filling a gate trench 204 formed inan epitaxial layer 201 having a top surface 201A. The gate trench 204may be coated with a shield layer 216A, or liner and poly silicon havingn+ doping may be deposited on it, etched back and planarized to fill thegate trench lined with the shield layer. Differing from the previousembodiments, the center of the poly silicon filling the gate trench 204may be further partially etched and removed to form a first poly siliconlayer 214A that is conformally coating the gate trench 204. In thisconfiguration the first poly silicon layer 214A extends to the topsurface 201A of the epitaxial layer 201.

A gate oxide layer 216B may coat the side walls 205A and top of thefirst polysilicon layer 214A. The gate oxide 216B may be formed usingthermal oxidation. An inter poly oxide (IPO) layer 210, or lateral IPO(LIPO) layer 210, may coat a top wall 205B of the first polysiliconlayer 214A. The IPO layer 210 may be formed using thermal oxidation andHDP oxide deposition process. A second poly silicon layer 214B may beformed by depositing poly silicon material having n+ doping onto thegate oxide layer 216B and the IPO layer 210 lining the cavity of thefirst poly silicon layer 214A. IPO layer thickness may range from about1.5 to about 2.5 times the gate oxide thickness.

As shown in FIGS. 9B-9C, in the following step, the thickness of thesecond poly silicon layer 214B may be first etched back to apredetermined thickness, and next patterned using a photoresist mask PR(poly 2 mask) to form a gap 206 by applying a wet or dry poly siliconetch. The gap 206 may vertically extend along the gate oxide layer 216Bto separate the second poly silicon layer 214B from the verticalportions of both the gate oxide layer 216B and the first poly siliconlayer 214A. The gap 206 may have a width in the range of about 1 μm.

As shown in FIG. 9D, after forming the gap 206, a dielectric layer 207may be deposited on the epitaxial layer 201. The dielectric layer 207fills the gap 206 and forms a lateral inter poly layer between thevertical portions of the first and second poly silicon layers 214A and214B. In one embodiment the dielectric layer 207 filling the gap 206 maybe BPSG or TEOS (tetraethyl orthosilicate).

Flowcharts in FIGS. 10A-10B show an exemplary process flow embodiment300 of the present invention. FIG. 10B is continuation of FIG. 10A.Referring to FIG. 10A, and collectively to the figures, in oneembodiment, in step 302, starting wafer may include an n siliconepitaxial layer (n epi layer) grown on an n+ silicon substrate.

In step 304, gate trenches (and optionally in some embodiments) may beformed in the n epi layer. In step 306, a shield oxide layer (SiO2) maybe formed on trench side walls and bottom walls of the gate trenches.The shield oxide layer may preferably be grown on the silicon side wallsand bottom walls. In step 308, a first n+ poly Si layer (first dopedpoly Si layer) formed within a lower half of the trench cavity which isentirely coated with the shield oxide layer formed in step 306. In step312, an inter poly silicon dielectric layer (IPO layer) may be formed ontop of the first n+ poly Si layer. The IPO layer may include a polysilicon oxide (PSO) layer and an HDP deposited silicon oxide layer. Inone embodiment, the IPO layer may have a thickness of about 1.5 to 2times the thickness of the gate oxide layer formed in step 316.

Following step 312, in step 314A, undoped poly Si (UPS) may be depositedon the IPO layer. In step 314B, the undoped poly silicon is etched downto form the UPS layer. In step 314C, exposed portions of the shieldoxide layer on the side walls of the gate trench are removed. In step314D, a silicon oxide layer, having a thickness of 20-30 nm, is formedon the UPS layer and on the exposed portions of the trench side walls.In step 314E, using RIE process, a portion of the silicon oxide layer ontop of the UPS layer is removed. In step 314F, the UPS layer on the IPOlayer is removed to expose the IPO layer. In step 314G, reminders of thesilicon oxide layer left on the trench side walls are removed.

In an alternative process embodiment sequence, after step 312, in step315A, photoresist may be deposited on the IPO layer. In step 315B, thephotoresist is etched down to form the photoresist layer (PR). In step315C, exposed portions of the shield oxide layer on the side walls ofthe gate trench are removed. In step 315D, the photoresist layer on topof the IPO layer is removed to expose the IPO layer.

In another alternative process embodiment sequence, after step 308, instep 310A, a poly silicon oxide layer (PSO layer) may be grown on thefirst n+ poly Si layer. In step 310B, a silicon oxide layer is depositedby HDP oxide deposition process. In step 310C, the silicon oxide layeris etched from the side walls to form the IPO layer. A photoresist (PR)layer is formed on the IPO layer. In step 310D, remaining oxide layerportions on top of the n epi layer surface (mesa) are etched while thestructures in the trench are protected by the photoresist layer, and thephotoresist layer on top of the IPO layer is removed to expose the IPOlayer.

After either following the process sequence through steps 314A-314G orsteps 315A-315D, in step 316, a sacrificial oxide layer is grown on theside walls of the gate trenches and on the top surface (mesa), and thesacrificial oxide layer is subsequently removed. In step 317, the gateoxide layer of about 10-150 nm may be grown on the on the exposedsilicon side walls of the upper portion of the trench cavity. Theprocess sequence including steps 310A-310D may also continue with step317 forming the gate oxide.

Referring to FIG. 10B, and collectively to the figures, in oneembodiment, after growing the gate oxide of the gate trench stacks instep 317 in FIG. 10A, in step 318, a second n+ poly Si layer formedwithin the upper half of the trench cavity and on the IPO layer. Thisstep completes the structure of the gate trench stack. Next, in step319, in certain regions of the wafer where the first n+ poly Si layerextends to the top surface of the n epi layer at an interface of thefirst n+ poly Si layer and the second n+ poly Si layer, the second n+poly Si layer is etched from the top surface down to the IPO layer. Thegap created after the etching of the second n+ poly Si may be filledwith a dielectric layer including one of silicon oxide, undoped siliconoxide and BPSG, undoped silicon oxide and PSG, or undoped silicon oxideand TEOS. The dielectric layer may be formed at the interface of thefirst n+ poly Si and the second n+ poly Si. In steps 320 and 321, p bodyregions and n+ source regions may be formed by implanting p type dopantsand n type dopants, respectively, at the top surface of the siliconlayer and between the gate trenches.

After step 321, in one embodiment, self-aligned p+ body regions may beformed by conducting the process steps 322A-322C. In step 322A, adielectric layer such as a BPSG layer, or an undoped silicon oxide layerand a BPSG layer, may be formed on top surface of the n epi layer. Next,in step 322B, a silicon oxide etching is applied to remove the siliconoxide filling the previously formed contact trenches, and in thefollowing step 322C, p+ body regions may be formed by implanting p typedopants through the contact trenches. The contact trenches in thisembodiment using the steps 322A-322C may be previously formed along thegate trenches and filled with a silicon oxide plug to protect it.

In another embodiment, after step 321, non self-aligned stripe orrectangular p+ body contact regions, and deeper and narrower p+ bodycontact trenches, may be formed by conducting the process steps324A-324C. This process flow is possible when only the gate trenches areformed in step 304 but not the contact trenches.

In step 324A, a dielectric layer such as at least of one of a siliconoxide layer, an undoped silicon oxide layer and a nitride layer, anundoped silicon oxide layer and a BPSG layer, or an undoped siliconoxide layer and a TEOS layer may be formed on top of n epi layer. Instep 324B, deeper and narrower p+ body contact trenches may be formed.Such contact trenches may be made narrower and deeper, than the onesdefined by the minimum feature size of photolithography, by narrowingthe contact windows of the contact mask, such as BPSG layer or TEOSlayer, using oxide spacers formed inside the contact windows. After thespacer formation, final p body contact trench width may shrink downabout twice the spacer width compared to the photoresist defined contactwidth. In step 324C, B or BF₂ ions may be implanted to form p+ bodyregions.

In another embodiment, after step 321, non self-aligned p+ body contactregions may be formed by conducting the following process steps. Thisparticular process flow is also only possible when only the gatetrenches are formed in step 304 but not the contact trenches.Accordingly, in step 326A, a dielectric layer such as an undoped siliconoxide layer and a BPSG layer, or a BPSG layer, may be formed on topsurface of the n epi layer. In step 326B, contact trenches may be formedbetween the gate trenches by utilizing a silicon oxide etching first,followed by a silicon etching. In step 326C, p+ body regions may beformed by implanting p type dopants through the contact trenches.

After selecting one of the process sequences shown through steps322A-322C, steps 324A-324C, and steps 326A-326C, in step 328, the metallayer including Ti/TiN/W and Al:Si:Cu, or A:lCu or Al:Si may bedeposited on the dielectric layer. In step 330, the metal layer may beetched. In step 332, a passivation layer may be deposited and etched. Instep 334, wafer backside may be ground and etched. Next, in step 336,back metal layer may be deposited on the backside.

Although aspects and advantages of the present invention are describedherein with respect to certain embodiments, modifications of theembodiments will be apparent to those skilled in the art. Thus, thescope of the present invention should not be limited to the foregoingdiscussion, but should be defined by the appended claims.

We claim:
 1. A method for forming shielded gate trench MOSFET devices,including: providing a silicon layer having n type conductivityoverlying a semiconductor substrate; forming, on a front surface of thesilicon layer, a plurality of gate trenches in an active region of thefront surface, the gate trenches extending orthogonally from the frontsurface toward the semiconductor substrate; forming in each gate trencha gate trench stack including: forming a shield layer lining side wallsand bottom wall of each gate trench, wherein the shield layer is siliconoxide; forming a first doped poly silicon layer on a portion of theshield layer lining the bottom wall and lower portions of the side wallsof the gate trench; removing upper portions of the shield layer toexpose upper portions of the side walls; forming a first film of aninter poly oxide (IPO) layer, which is a poly silicon oxide film, on topof the first doped poly silicon layer, by applying an oxidation process,the oxidation process also results in forming a silicon oxide layer onthe upper portions of the side walls; forming a second film of the interpoly oxide (IPO) layer on the first film of the IPO layer, which is asilicon oxide film, by first depositing a silicon oxide film on both thefirst film and the silicon oxide layer, patterning the silicon oxidefilm with a photoresist layer so as to only expose the portions of thesilicon oxide film on the silicon oxide layer, and etching portions ofthe silicon oxide film and the silicon oxide layer on the upper portionsof the side walls, removing the photoresist layer to expose the IPOlayer; growing a gate oxide layer on the upper portions of the sidewalls; and forming a second doped poly silicon layer, on the gate oxidelayer and the IPO layer, filling the gate trench; forming p body regionsand n+ source regions extending between the gate trenches; and forming adielectric layer on the front surface.
 2. The method of claim 1 furthercomprising forming p body contact trenches via a contact mask.
 3. Themethod of claim 2 further comprising forming p+ body regions by lowenergy ion implantation of Boron or BF₂ through the body contacttrenches.
 4. The method of claim 3 further comprising forming a topmetal layer for source electrodes and gate electrodes.
 5. The method ofclaim 2 further comprising patterning and etching the dielectric layerto form contact windows to apply etchants to the semiconductor layerunderneath to form the p body contact trenches.
 6. The method of claim 2further comprising narrowing the contact windows by forming spacerstructures enabling to etch deep and narrow p body contact trenches. 7.The method of claim 1, wherein forming the first doped poly siliconlayer includes depositing n+ type poly silicon on the shield oxide layerto completely fill the gate trench, and CMP planarizing or etching backto form the first doped poly silicon layer having the predeterminedthickness.
 8. The method of claim 1, wherein the silicon oxide film is ahigh-density plasma (HDP) silicon oxide film.
 9. The method of claim 1further comprising, prior to the growing the gate oxide layer: growing asacrificial layer including silicon oxide on the side walls; and etchingthe sacrificial layer from the side walls of the gate trench to smoothsurfaces of the side walls, which also reduces the thickness of thesecond film of the IPO layer by substantially the same thickness. 10.The method of claim 1, wherein forming the second doped poly siliconlayer includes depositing n+ doped poly silicon on the IPO layer and thegate oxide layer to completely fill the gate trench, and CMP planarizingor etching back to form the second doped poly silicon layer having thepredetermined thickness.
 11. A method for forming shielded gate trenchMOSFET devices, including: providing a silicon layer having n typeconductivity overlying a semiconductor substrate; forming, on a frontsurface of the silicon layer, a plurality of gate trenches in an activeregion of the front surface, the gate trenches extending orthogonallyfrom the front surface toward the semiconductor substrate; forming ineach gate trench a gate trench stack including: forming a shield layerlining side walls and bottom wall of each gate trench, wherein theshield layer is silicon oxide; forming a first doped poly silicon layeron a portion of the shield layer lining the bottom wall and lowerportions of the side walls of the gate trench; removing upper portionsof the shield layer to expose upper portions of the side walls; formingan inter poly oxide (IPO) layer, including a poly silicon oxide film, ontop of the first doped poly silicon layer, wherein forming of the IPOlayer results in forming silicon oxide on upper portions of the sidewalls; depositing photoresist on the IPO layer; etching down thephotoresist to form a photoresist layer on the IPO layer; removing anysilicon oxide from the side walls formed during the forming of the IPOlayer by a silicon oxide etching; removing the photoresist layer toexpose the IPO layer; growing a gate oxide layer on the upper portionsof the side walls; and forming a second doped poly silicon layer, on thegate oxide layer and the IPO layer, filling the gate trench; forming pbody regions and n+ source regions extending between the gate trenches;and forming a dielectric layer on the front surface.
 12. The method ofclaim 11 further comprising forming body contact trenches via a contactmask.
 13. The method of claim 12 further comprising forming p+ bodyregions by low energy ion implantation of B or BF₂ ions through the bodycontact trenches.
 14. The method of claim 13 further comprising forminga top metal layer for source electrodes and gate electrodes.
 15. Themethod of claim 13 further comprising patterning and etching thedielectric layer to form contact windows to apply etchants to thesemiconductor layer underneath to form the p body contact trenches. 16.The method of claim 12 further comprising narrowing the contact windowsby forming spacer structures enabling to etch deep and narrow p bodycontact trenches.
 17. The method of claim 11, wherein forming the firstdoped poly silicon layer includes depositing n+ type poly silicon on theshield oxide layer to completely fill the gate trench, and CMPplanarizing or etching back to form the first doped poly silicon layerhaving the predetermined thickness.
 18. The method of claim 11 furthercomprising, prior to the growing the gate oxide layer: growing asacrificial layer including silicon oxide on the side walls; and etchingthe sacrificial layer from the side walls of the gate trench to smoothsurfaces of the side walls, which also reduces the thickness of thesecond film of the IPO layer by substantially the same thickness. 19.The method of claim 11, wherein forming the second doped poly siliconlayer includes depositing n+ doped poly silicon on the IPO layer and thegate oxide layer to completely fill the gate trench, and CMP planarizingor etching back to form the second doped poly silicon layer having thepredetermined thickness.
 20. The method of claim 11 further comprising,on the front surface of the silicon layer, forming p body contacttrenches between the gate trenches, the p body contact trenchesextending orthogonally from the front surface toward the semiconductorsubstrate.